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| 10.08.2010 RLT808500G.doc 1 of 1 RLT808500G technical data high power infrared laserdiode structure: high efficiency movcd quantum well design lasing wavelength: 808 nm typ. output power: 500 mw, cw package: 9 mm pin connection: 1) laser diode cathode 2) laser diode anode and photodiode cathode 3) photodiode anode absolute maximum ratings (tc=25c) characteristic symbol rating unit optical output power p o 550 mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature t c -10 .. +40 c storage temperature t stg -40 .. +80 c optical-electrical char acteristics (tc = 25c) characteristic symbol test condition min typ max unit optical output power p o kink free 500 mw threshold current i th cw 150 180 ma operation current i op p o = 500 mw 650 700 750 ma operation voltage v op p o = 500 mw 1.85 2.0 v slope efficiency cw 0.8 1.0 1.1 w/a lasing wavelength p o = 500 mw 805 808 811 nm beam divergence // p o = 500 mw 5 9 12 beam divergence p o = 500 mw 30 35 45 lasing aperture a p o = 500 mw 50x1 m2 recommended operating temperature t op cw 20 25 40 c monitor current i m p o = 500 mw 0.6 1.5 ma note! laserdiode must be cooled!
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